<^.mi-(^on.aactoi l/-* 10 duct i, una. 20 stern ave. springfield, new jersey 07081 npn silicon transistor 2sc1940 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 description the 2sc1940 is designed for use in driver stages of audio frequency amplifiers. features * high total power dissipation and high breakdown voltage: 1.0 wat 25 c ambient temperature/vceo = 120 v absolute maximum ratings maximum temperatures storage temperature ?55 to +150 c junction temperature +150 c maximum maximum power dissipation (ta = 25 c) total power dissipation 1.0 w thermal resistance(junction to ambient) 125c/w maximum voltages and currents (ta = 25 c) vcbo collector to base voltage 120 v collector to emitter voltage 120 v emitter to base voltage 5.0 v collector current 50 ma base current 10 ma vceo vebo >c ib package dimensions in millimeters (inches! 1. emitter 2. collector 3. base electrical characteristics (ta = 25 c) symbol hfe1 hfe2 ft cob 'cbo !ebo vbe vce(sat) vbe(sat) characteristic dc current gain dc current gain gain bandwidth product output capacitance collector cutoff current emitter cutoff current base to emitter voltage collector saturation voltage base saturation voltage win. typ. 90 200 50 180 50 120 2.3 650 685 0.07 0.75 max. 400 3.0 100 100 750 0.6 1.0 unit - - mhz pf na na mv v v test conditions vce = 10 v, lc=10ma vce=10 v. lc-1.0ma vce = io v. lg=-10ma vcb = 10 v, ie=o, f-1.0 mhz vcb-120 v, ie=o veb = 5.0 v, lc=0 vce=10 v, lc=10ma ig = 20 ma. 13=2.0 ma lc = 20 ma. lb"2.0 ma classification of rank range m 90 - 180 l 1 35 - 270 k 200 - 400 hfe1 test conditions: vce = 10 v. \q= 10 ma nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
typical characteristics (ta=25 c unless otherwise noted) total power dissipation vs. ambient temperature safe operating areas (transient thermal resistance method) collector current vs. collector to emitter voltage 1 0.8 c 2 ra a 0.6 a i ??? "s 2 0.2 q. 0 \0 100 150 200 25 ta? ambient temperature ? *c 200 ?| ice 1 c 50 t ? 20 5 s ia 3 s cj 2 1 0 1 ? 1 , i [ 1 r^_-^ 4t ml ? fc^a ^t 0 20 vce ^collector ! ! , duty cycle2 % ! ! j 1 ^! _ ? 1 ^ -u n. rit- -[?- "41 i ^ "- l-fe ffl ,s v t-n ^ -(- t ; ? f ? ! ? =f? - i i < - 1 30 o 0 20 s 0 y > jj -as 400 ^ ^ x .^zm^ % '/, '/ \s /v ^ / s s yss ffi s\ r***\- \' ? - ? 2 ? ? o? i 150 100 ib =50 * 0 ^?? = ! a ? 100 200 300 o 24681 to emitter voltage-v vce-collector to emitter voltage-v collector current vs. collector to emitter voltage collector current vs. base to emitter voltage dc current gain vs. collector current 20 40 60 80 100 -collector to emitter voltage-v 1.5 0.6 0,7 0.3 09 10 ^-base to emitter voltage-v 1 0.2 0.5 1 2 5 10 20 50 100 1c-collector current-ma collector saturation voltage vs. collector current 0.1 0.2 0.5 1 2 s 10 20 so 100 1c ^collector current-ma base saturation voltage vs. collector current " 0.2 3! o.i ? 0.05 s '02 31 0-0! ic '-10-19 ..1 0.2 0.5 1 2 5 10 20 50 100 ir?collector current ? ma gain bandwidth product vs. emitter current '.1-0.2 -0.5-1 -2 -5 -10-20 -50-100 ie-emitter current-ma
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